FCH25N60N datasheet

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О ДАТАШИТЕ

• Маркировка
  FCH25N60N
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FCH25N60N Continuous Drain Current: 25 A Current - Continuous Drain (id) @ 25?° C: 25A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 74nC @ 10V Input Capacitance (ciss) @ Vds: 3352pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 216W Power Dissipation: 216 W Rds On (max) @ Id, Vgs: 126 mOhm @ 12.5A, 10V Resistance Drain-source Rds (on): 0.108 Ohms Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 600 V Resistance Drain-Source RDS (on): 0.108 Ohms Factory Pack Quantity: 150
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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